Navitas Semiconductor GaNFast Power integrated circuits are easy to use, high speed, high performance "digital input, power output" building blocks. The component features integrated grid drive, wide range VCC and PWM inputs, internal 2kV ESD protection and large thermal cooling pads.
Monolithic integrated drivers and power stages achieve high switching frequencies while keeping the signal clean and eliminating any unnecessary noise that affects device control and reliability. The GaNFast Power ic enables high-frequency operation, is easy to use, has a flexible design, and is compatible with popular topologies and controllers.
Features
● Enables 6x higher switching frequency, reduction of external components, and 3x smaller passives compared to a discrete GaN solution
● 800V peak capability
● Monolithically-integrated gate drive
● Zero reverse recovery charge
● Programmable turn-on dV/dt
● Clean switching
● Safe, robust, and reliable performance
● Wide logic input range with hysteresis
● Under-voltage lockout (UVLO)
● No turn-off loss
● Eliminates gate overshoot/undershoot
● 20-year limited warranty
● Available packages
PQFN-5x6-8
PQFN-6x8-30
● Thermally enhanced versions available
● Lead-free, RoHS and REACH compliant
Applications
● Fast chargers
● Consumer
● Enterprise
● Solar
● EV
Specifications
● 650V continuous voltage
● 800V transient voltage
● 5.5V to 24V supply voltage range
● 2MHz operation
● 70mΩ to 300mΩ resistance range
● 6ns to 10ns rise time range
● 3ns to 5ns fall time range
● 11ns to 15ns maximum propagation delay range
● 200V/ns dV/dt immunity
● -40°C to +125°C operating temperature range
● 7 or 30 pins
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