Excelitas has announced the introduction of an enhanced InGaAs avalanche photodiode (APDs), Model C30645 / C30662. These redesigned diodes take advantage of Ethelida's improvements in Class III/V wafer growth and processing architecture to achieve cutting-edge noise specifications. The new design provides customers with a better signal-to-noise ratio (SNR), resulting in a longer range for the same laser output power.
Other benefits of the enhanced architecture include:
• Enhanced ranging capabilities with LiDAR, laser scanners and rangefinders
• SMD packages for high volume production
• Improve the signal-to-noise ratio of optical time domain reflectometer (OTDR)
• Suitable for optical communication systems with space grade requirements
"We've added low-noise options to the C30645 and C30662 series APDs to improve system-level performance for a variety of applications," "The improved signal-to-noise ratio enables better differentiation between signal and noise, helping OEM customers achieve higher accuracy, longer range and lower power requirements," said Richard Simons, product manager for photon detection at Excelitas.
Excelitas' C30645 and C30662 series APDs are high-speed, large-area InGaAs/InP avalanche photodiodes that provide high quantum efficiency (QE), high responsiveness and low noise in the spectral range from 1000 nm to 1700 nm. These enhanced diodes are optimized at 1300 nm and 1550 nm wavelengths, making them suitable for eye-safe laser ranging and LiDAR systems. For easy integration into high-volume applications, these APDs are available in a variety of package options, including airtight TO-18 packages, ceramic carriers, or ceramic surface-mount packages.
Given that performance requirements vary from application to application, Eselida offers a wide range of customized services for these photodiodes to meet the design challenges. Application-specific solutions include responsiveness and noise screening, custom device testing, and integrated bandpass filters.
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