Expanded CMOS DDR4 sdram lineup with new devices

     Alliance Memory has expanded its CMOS DDR4 sdram portfolio with the addition of new 16Gb devices in a 96-ball FBGA package. With minimal die shrinkage, DDR4 SDRAM provides a reliable plug-in, pinch-compatible alternative for countless similar solutions -- eliminating the need for costly redesigns and part revalidation.

     DDR4 SDRAM provides a low operating voltage of +1.2V(±0.06V), which can extend the battery life of portable electronics such as smartphones and tablets. The product has been developed, qualified, and recommended for 5G design, computing applications, smart meters, monitoring systems, HMI, digital signal controllers, PNDS, etc. The device is based on an 8n prefetch architecture that provides fast clock speeds up to 1600MHz and transfer rates up to 3200 MT/s.

     The 1Gb x 16 bit device supports sequential and interleaved burst types. The read/write burst length can be BC4, BL8, or dynamic. The automatic precharge feature provides a self-timed line precharge starting at the end of the burst sequence. Easy-to-use refresh features include automatic or self-refreshing.

     The AS4C1G16D4-062BCN offers the company's customers a high density option for a wide range of applications, offering better performance with lower power consumption, higher speeds and transmission rates compared to the previous generation DDR3 sdram. The equipment is offered in the commercial (0 ° C to +95C) temperature range and is suitable for industrial, networking, telecommunications, gaming and consumer markets