French synthetic diamond startups Diamfab and HiQuTe Diamonds have announced a partnership

     Semiconductor diamond deep technology company Diamfab and plasma-assisted CVD synthetic diamond startup HiQuTe diamond announced a strategic technology partnership. This partnership covers key stages of the value chain, from the production of substrates to the production of electronic components to the epitaxy of doping layers.

     HiQuTe Diamond will leverage its unique expertise in producing high-quality diamond substrates specifically designed to optimize the performance of power electronic devices. Diamfab will be responsible for the production of high-performance components and epitaxial growth of doping layers using advanced crystal growth procedures.

     Both companies are from internationally recognized CNRS laboratories: Institut nsamel for Diamfab and LSPM (Laboratoire des Sciences des procsamdsams et des matsamriaux) for HiQuTe Diamond. With more than 30 years of research experience, the two companies have unique expertise that puts France at the forefront of semiconductor diamond innovation.

     This partnership is the first in the world to achieve a high quality partnership in academic and industrial fields by combining mastery of the three key stages - substrate, epitaxy and manufacturing. To transform diamond semiconductors into an industrial reality, the two companies will be able to accelerate iteration cycles and achieve unprecedented technical and financial performance due to their industrial agility and geographic proximity.

     According to Diamfab, the heart of the global economic expansion is power semiconductors. Diamond semiconductors, which perform 10 to 40 times better than semiconductors made from traditional materials, are critical for widespread adoption of electrification and decarbonization of entire economic sectors. Diamfab has the technical, human and geographic resources, as well as the willingness to build an industry of excellence in France through its partnership with HiQuTe Diamond.

     According to HiQuTe Diamond, the plasma-assisted CVD growth process can produce boron-doped diamonds specifically designed for rigorous applications in power electronics. This sustainable process ensures strict regulation of physical properties while addressing performance challenges. The convergence of our expertise and Diamfab's expertise provides an unparalleled opportunity to address the global industry's energy efficiency and performance challenges.

     The two organizations intend to begin their partnership by producing a preliminary series of vertical Schottky diodes on HiQuTe Diamond substrates. This will be achieved through Diamfab's optimization of diamond epitaxy. The prototype product, which is expected to be released in spring 2025, will be a major technological advance that will facilitate the industrialization of diamond semiconductors. This will be a major turning point for the high-performance industry.