GaN Systems introduces two GaN half-bridge evaluation panels with 650V

     GaN Systems has developed two 650V half-bridge evaluation boards (30 A and 60 A) to evaluate the performance of gallium nitride (GaN) drivers and GaN transistors in a variety of applications. The company claims that these daughter boards are the industry's first to offer an adjustable threshold and programmable source current with overcurrent protection to achieve adjustable on-swing rates.

     The subboards are available in two power levels: up to 3 kW (GS-EVB-HB-66508B-RN) and up to 6 kW (GS-EVB-HB-66516T-RN), and contain Renesas Electronics RAA226110 low-side GaN FET drivers with programmable source current and adjustable overcurrent protection.

     The RAA226110 is designed to drive enhanced mode GaN FETs in isolated and non-isolated topologies, providing a wide supply voltage range from 6.5V to 18V. The device provides both inverted (INB) and in-phase (IN) inputs to meet the requirements of using a single device for both inverted and in-phase gate drives.

     GaN Systems 650V GaN Half-Bridge Evaluation board can be used with GaN Systems motherboards to simplify setup and plug and play operation. Features include integrated VGS regulation at 2 MHz fSW and programmable overcurrent protection with 40 mV / 80 mV / 120 mV adjustable thresholds as well as differential current detection and programmable source current for adjustable on-swing rates (0.3A, 0.75A, or 2A).

     The GS-EVB-HB-66508B-RN 650-V 30-A GaN half-bridge and GS-EVB-HB-66516T-RN 650-V 60-A GaN half-bridge demo boards are equipped with RAA226110 gate drivers. The evaluation kit includes two GaN Systems 650-V GaN E-mode transistors (for the 30A version of the GS66508B and for the 60A version of the GS66516T) and all the necessary circuitry, including half-bridge gate drivers, isolated power supplies, and optional heat sinks. With this demo board, designers can evaluate the performance of any GAN-E mode based on half-bridge topology using a common motherboard (P/N: GS665MB-EVB) or their own system design.

     GaN Systems says these power level designs can be used in a variety of applications, including enterprise-class 1U power supplies (up to 5 kW), high power density bridgeless totem pole PFCS, photovoltaic inverters, energy storage systems, motor drives and automotive DC/DC converters and on-board chargers.

     The company also recently introduced four integrated GaN power module evaluation kits that make it easy to evaluate GaN power devices for high-power applications. These products include traction inverters, industrial motors, energy storage systems, photovoltaic inverters, and various lower power panels and brick power supplies. Four evaluation kits include: 100V driver GaN DC/DC power level modules; And 650 V, 150 A half-bridge intelligent power module (IPM); 650 V, 150 A full bridge modules and drivers and 650 V, 300 A three-phase modules and drivers.