High voltage side gate driver and common drain MOSFET of Toshiba

     Toshiba's TCK42xG grid driver series solutions solve various challenges in power multiplexing. TCK421G is the first product in this series, specially designed for 20 V lines.

     Power multiplexing is an important function in applications that require the main power supply to have a backup power supply or exchange between wireless and USB charging protocols. The gate driver is suitable for various MOSFET configurations. In order to obtain better power density, the common drain MOSFET is an ideal choice. Because TCK421G is designed with two gate drive pins, it can be used with MOSFETs such as SSM10N954L (typical value is 12 V/2.2 m Ω at 3.8 V). As a result, this common drain MOSFET configuration saves 75% of the space compared to standard 5 mm x 6 mm MOSFETs.

     Because of its built-in slew rate control and discharge functions, TCK421G provides a 3ms starting time, which helps simplify the timing control without the need for additional devices. The series has improved drive and discharge capabilities to help open and close MOSFETs faster.
The TCK421G has a 2.2 V undervoltage lockout (UVLO) and a 20 V overvoltage lockout (OVLO). This helps the downstream IC to be in a protected state and within the recommended specifications. If you are worried about the overshoot voltage, adding zener diodes is an additional way to protect the gate driver TCK421G.