IGBT FS7 switch platform suitable for leading performance, application industrial market

     Leading the intelligent power supply and intelligent sensing technology (onsemi), the launch of a new series of ultra-high energy efficiency 1200V insulated gate bipolar transistors (IGBTs), with industry-leading performance levels, to minimize on-off loss and switching loss. These new devices are designed to improve energy efficiency in fast-switching applications and will be used primarily in energy infrastructure applications such as solar inverters, uninterruptible power supplies (UPS), energy storage and electric vehicle charging power conversion.

     The new 1200V Trench Type Field cutoff (FS7) IGBTs are used in high switching frequency energy infrastructure applications to boost the circuit to increase the busbar voltage and the inverter circuit to provide AC output. The low switching loss of FS7 devices enables higher switching frequencies, resulting in reduced magnetic component size, increased power density and reduced system cost. For high-power energy infrastructure applications, the positive temperature coefficient of FS7 devices enables easy parallel operation.

     Asif Jakwani, Senior Vice President and General Manager, Advanced Power Division, Power Solutions Division, ON Semiconductor, said: "Because energy efficiency is critical in all high-switching frequency energy infrastructure applications, we are focused on reducing turn-off losses. This new family of IGBTs provides excellent switching performance, and its industry-leading performance enables designers to meet the most challenging energy efficiency requirements in very demanding high-power energy infrastructure applications.

     FS7 devices include high speed (S series) and medium speed (R series) versions. And can use TO247-3L, TO247-4L, Power TO247-3L and other packaging, also can provide naked chips, to provide flexibility for designers and design alternative configuration. All devices include a diode optimized for low VF, reduced switching losses and operation at junction temperatures up to 175℃.

     S-series devices such as FGY75T120SWD lead the market in switching performance of existing 1200V IGBTs. Tested at 7 times rated current, this highly reliable IGBT product shows outstanding latching resistance. The R Series is optimized for medium-speed switching applications where on-loss is predominant, such as motor control and solid-state relays. The FGY100T120RWD has A VCESAT as low as 1.45V at 100 A, 0.4V lower than the previous generation of devices.