Improving performance and reliability: The core challenge of silicon carbide packaging technology

In electric drive systems such as electric vehicles and wind power generation, silicon carbide power electronic equipment has gradually replaced traditional silicon-based power electronic equipment because of its excellent performance. However, in order to fully mobilize the advantages of silicon carbide power electronic equipment, its packaging process is particularly important. Next, we will focus on the three core technologies of silicon carbide output power device packaging: low stray inductance packaging technology, continuous high temperature packaging technology and its multipurpose integrated packaging technology.

▲ Low stray inductance package technology

Silicon carbide power electronic equipment with its high frequency, continuous high temperature, high efficiency characteristics, packaging process put forward higher requirements. Among them, the theory of low stray inductance packaging is one of the keys to make full use of the characteristics of silicon carbide power electronic equipment. In the traditional silicon output power equipment package, the stray inductance caused by the interface mode such as the metal material bonding wire is relatively large, and the operating voltage needs to be overcharged and oscillated in the process of high-frequency switching, which affects the performance and stability of the equipment. In order to reduce stray electrical induction, the researchers proposed a series of new packaging structures.

The core of low stray inductance packaging technology is to reduce the current circuit area and thus reduce the stray induction value. For example, by removing the bonding lines of metal materials, the application of planar interconnection methods, such as direct connection of terminal blocks, can significantly reduce the current circuit and thus reduce stray inductance. In addition, the choice of soft PCB board instead of the traditional metal material bonding line is also an effective means to achieve low stray inductance packaging. The use of this method not only improves the performance of silicon nitride power electronic equipment, but also ensures its stable operation in high frequency and high temperature environment.

▲ Continuous high temperature packaging process

Silicon carbide power electronic equipment can work in a high temperature environment, so maintaining high temperature packaging technology is another important factor to ensure its quality stability and full play. Traditional packaging materials such as tin welding will dramatically decrease their stability at high temperatures and even fail to operate normally. Therefore, the key to continuous high temperature packaging technology is to explore the connection raw materials suitable for high temperature operations, and match the thermal stability of different materials in the packaging form.

At present, researchers have developed a variety of continuous high temperature packaging materials and technologies, which can use continuous high temperature welding materials, ceramic based materials and. The development of various materials and technologies has not only improved the stability and reliability of silicon nitride power electronic devices in high temperature environments, but also provided possibilities for its application in a wider range of industries.

▲ Multi-purpose integrated packaging process

With the increasing function of electronic control system, multipurpose integrated packaging technology has become the main development prospect of silicon carbide output power device packaging. This method integrates multiple functional devices in one package, which achieves tight and reasonable layout and high performance. For example, passive components such as high-voltage porcelain capacitors are integrated in the package form, which can effectively reduce the main parameters of the parasitic inductance of the output power control circuit, reduce fluctuations and overcharging during the power switching process. This integrated package form not only improves the overall performance of the system, but also reduces the overall volume and weight, increasing the economy for the main uses of new energy electric vehicles and wind power generation.

However, multipurpose integrated packaging technology faces some challenges, such as thermal matching between different materials, processing speed and heat dissipation of passive components. To solve this problem, researchers are rapidly looking for new raw materials and technical means to improve the performance and stability of multipurpose integrated packaging forms.

Conclusion

The packaging process of silicon carbide power electronic equipment is an important link to ensure the full utilization of its characteristics. The three core technologies are low stray inductance package technology, continuous high temperature package technology and intelligent integrated package technology. The development of this technology not only improves the performance and stability of silicon carbide power electronic equipment, but also provides possibilities for its application in a wider range of industries. With the continuous development and innovation of technology, the packaging technology of silicon carbide power electronic equipment will face more development opportunities and challenges. We look forward to the future development of silicon carbide power electronic equipment packaging technology can be gradually improved and innovative initiative, and innovation.