Infineon has launched the CoolGaN IPS range for power level applications ranging from 30 W to 500 W

     The power switch made of wide -nitrogen (GAN), which is made of Nitride (GAN), has opened a new era of power electronics with its excellent efficiency and high -speed switching frequency. In response to this development trend, Yingfei Ling Technology Co., Ltd. launched an integrated power level (IPS) product COOLGAN IPS series, becoming the latest product of many WBG power component combinations. The basic product portfolio of IPS includes semi -bridge and single -channel products. The target market is low -power to medium -power applications, such as chargers, adapters, and other switching power supply (SMPS).

     Representative products 600 V Coolgan semi -bridge IPS IGI60F1414A1L is suitable for low -power to medium -power range and small lightweight design applications. The appearance is 8x8 QFN-28 packaging type, which is strengthened for the heat dissipation efficiency, and can provide extremely high power density for the system. This product contains two 140 MΩ / 600 V Coolgan enhanced type (E-Mode) HEMT switch and Yingfei Ling EICEDRIVER series.

     The isolation gate drive has two digital PWM inputs, making IgI60F1414A1L easier to control. In order to achieve the goals such as shortening development time, reducing system material list projects, and reducing total costs, the use of integrated isolation functions, clarifying differential digits and power supply grounding, and simplifying PCB configuration are indispensable elements. The grid drive uses Yingfei Ling's single -chip magnetic core transformer (CT) technology to effectively isolate input and output. Even if the voltage increases or decreases the super fast switching instantaneous switching of 150 V/NS, it can still ensure high -speed characteristics and outstanding stability.

     The switching characteristics of IGI60F1414A1L can be simply achieved according to different applications, such as the passive component of the grid path, such as the blocking device. For example, this feature can optimize the current or voltage rate to reduce the electromagnetic interference (EMI) effect, the steady -state grid current adjustment and the negative meter voltage driver, and run stably in the hard switch switch application.

     In addition, the high -precision and stable transmission latency of system -level packaging integration and grid drives can provide IGI60F1414A1L with the lowest system dead area. This will help the system efficiency to greatly increase the power density of the charger and adapter solution to a higher level to 35 W/In³. Flexible, simple and fast design features are also suitable for other applications such as LLC resonance topology, motor drives and other applications.