Infineon Technologies 6ED223xS12T EiceDRIVER gate driver IC

     Infineon Technologies 6ED223xS12T EiceDRIVER  Level Shifted Gate Driver IC A high voltage (up to 1200V), high speed insulated gate bipolar transistor (IGBT) with three separate high-side and low-side reference output channels for three-phase applications. Proprietary HVIC and latched CMOS technology is used to achieve a robust monolithic construction. Logic input compatible with standard CMOS or TTL output, as low as 3.3V logic. The resistor also has an overcurrent protection (OCP) feature that terminates all six outputs.

     The three-phase 6ED223xS12T IC provides an open/break fault signal to indicate overcurrent or undervoltage shutdown. Automatically removes fault conditions after externally programmed delays via RC networks. These output drivers feature high pulse current buffer stages designed to achieve minimal driver cross conduction.

     The floating channel can be used to drive an N-channel power MOSFET or IGBT in high-side configurations with operating voltages up to 200V. Can be matched propagation extension to simplify the use of HVIC in high frequency applications.