Infineon Technologies CoolGaN™ 600V GIT HEMT

Mar 10 2023 2023-03 Power Infineon Technologies

Infineon Technologies CoolGaN™ 600V Gate Injection Technology (GIT) High electron Mobility Transistors (HEMTs) feature fast on-off and off-off speeds with minimal switching losses. The GaN enhanced mode power transistor family is packaged in a ThinPAK 5x6 surface mount package and is ideal for applications requiring compact devices without heat fins. The Infineon Technologies CoolGaN™ 600V GIT HEMT has a small size of 5mm x 6mm2 and a thin height of 1mm, making it ideal for achieving high power density.

Features

● Enhanced mode transistor, normally off type switch
● GaN HEMTs in a small size leadless SMD package
● GaN custom certification
● Super fast switching speed
● No reverse recovery charge
● Can anti - wizard pass
● Low grid charge, low output charge
● Excellent commutation tolerance
● Improve system efficiency
● Increase power density
● Support higher working frequency
● System cost reduction
● EMI reduction
● In accordance with JEDEC standards (JESD47 and JESD22), suitable for industrial applications
● No lead, no halogen, in accordance with the RoHS directive

Specifications

● Continuous drain-source voltage: 600V (Max.)
● Drain-source destructive breakdown voltage: 800V (minimum)
● Pulse drain-source voltage
- 750V (Max., 25°C)
- 650V (Max., +125°C)
● Pulse switch surge voltage: 750V (Max.)
● Drain-source continuous current range: 8.2A to 12.8A (Max.)
● Drain-source pulse current range: 12.2A to 23A (Max.)
● Drain-source pulse current range: 5.9A to 11A (Max.)
● Continuous grid current range: 4mA to 7.7mA (Max.)
● Pulse grid current range: 406mA to 770mA (Max.)
● Continuous grid-source voltage: -10V (minimum)
● Pulse grid-source voltage: -25V (minimum)
● Maximum power consumption range: 41.6W to 55.5W
● Drain-source voltage conversion rate: 200V/ns (maximum)
● Operating temperature range: -40°C to +150°C

Applications

● SMPS for industrial, telecommunications, and data centers based on half-bridge topologies (half-bridge topologies for hard and soft switches, such as totem pole PFC, high frequency LLC)
● Low power SMPS
● Chargers and adapters

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