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Infineon Technologies has introduced a new family of dual-channel electrically isolated EiceDRIVER gate driver ics

Jun 13 2023 2023-06 Semiconductors Infineon Technologies
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Today, 3.3 kW switching power supplies (SMPS) use the latest technologies such as superjunction (SJ silicon) power MOSFETs and silicon carbide (SiC) power MOSFETs in the totem pole PFC stage, as well as gallium nitride (GaN) power switches that meet high voltage DC-DC power conversion requirements. The power density can reach 100 W/inch3. That is why Infineon Technologies has introduced a new family of dual-channel electrically isolated EiceDRIVER gate driver ics.

     Today, 3.3 kW switching power supplies (SMPS) use the latest technologies such as superjunction (SJ silicon) power MOSFETs and silicon carbide (SiC) power MOSFETs in the totem pole PFC stage, as well as gallium nitride (GaN) power switches that meet high voltage DC-DC power conversion requirements. The power density can reach 100 W/inch3. Digital control of PFC and DC-DC is as critical to energy efficiency and robustness as great gate drive solutions. To meet the latest design and application needs, Infineon Technologies has introduced a new family of dual-channel electrically isolated EiceDRIVER gate driver ics.

 

     With multiple under-voltage lock (UVLO) threshold options and isolation levels, and different packaging technologies, the product family offers a complete solution for a variety of applications. The new portfolio combines powerful isolation technology that meets the latest industry standards with excellent electrical parameters to operate efficiently and reliably over a wide operating temperature range and extend the life of the device. The drive family is versatile and suitable for server and telecom SMPS, solar inverters and energy storage systems, motor drive and battery powered applications, electric vehicle charging, and high performance computing.

 

     Compared with the previous generation of products, the new generation of EiceDRIVER introduces DSO 14 pin package, which can increase the creepage distance between channels; At the same time, the built-in dead-time control and breakdown protection function can also shorten the UVLO startup time. The new generation of EiceDRIVER uses robust isolation technology that complies with the industry's latest device-level isolation standards (VDE 0884-11, IEC 60747-17). In addition, the drive family features a highly compact LGA 4x4 mm2 package, which can save up to 36% of space in low-voltage applications. One of the key improvements and upgrades developers have made to the new generation of EiceDRIVER is the integration of electrical isolation technology in the gate driver IC, which is currently IEC 60747-17 certified. IEC 60747-17 certification means that these products have a service life of 20 years and meet the requirements of the highest safety standards.

 

     The shorter UVLO startup time (from 5μs to 2μs) speeds up SMPS startup and prevents the main power transformer from becoming saturated. In addition, the new generation IC comes with a special output clamping circuit that enables active output clamping to quickly suppress output noise even when the channel is "not working." This versatile approach prevents dangerous half-bridge through-through events during bootstrap startup when the gate driver power supply is still below the UVLO open threshold.

 

     The new generation of gate driver ics has configurable breakdown protection (STP) and dead-time control (DTC) built into the hardware. These two functions serve as a second-level safety mechanism, providing further protection to ensure that the gate driver IC can operate safely and reliably. In addition, the innovative package design removes unused or previously known as "connectionless" pins, increasing the level of isolation between channels and the flexibility of the PCB layout, thereby reducing the difficulty of circuit development for designers.

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