Infineon accelerates the launch of the new CoolSiC MOSFET 1200V single tube

     Infineon Technologies AG accelerates the launch of the new CoolSiC™ MOSFET 1200V single tube. The new products range in on-resistance from 30 mΩ to 350 mΩ and are available in TO247-3pin and TO247-4pin packages. In addition, new Surface Mount packaging (SMD) and CoolSiC™ MOSFET 650V single-tube products will be available soon. With these products, Infineon can meet the rapidly growing demand for energy-efficient SiC solutions for power conversion applications such as electric vehicle charging facilities, energy storage systems, photovoltaic inverters, uninterruptible power supplies (UPS), motor drives and switching power supplies (SMPS) for servers and telecommunications equipment.

     Peter Wawer, President of Infineon's Industrial Power Control Division, said: "At Infineon, new foundational technologies must meet stringent quality standards. Even with the standard TO-247 single-tube package, the front and rear serial production processes must be proven. These include: collecting statistics, monitoring production, and conducting application-related tests outside of standardized production. "Having successfully completed pilot production of the underlying SiC MOSFET technology, we are now bringing the most comprehensive CoolSiC™ MOSFET portfolio to market."

     Like the previous CoolSiC™ MOSFETs in the TO247 single tube package and the Easy module package, the new single tube products are built using the industry's most advanced trench process. Using this process can not only reduce the loss in the application, but also ensure the high reliability in operation. Very low dynamic loss Maximum efficiency is achieved with a simple single-pole drive solution.

     Infineon's CoolSiC™ MOSFET groove technology combines threshold voltages (Vth) of up to 4V with low Miller capacitance. Because of this, CoolSiC™ MOSFETs avoid parasitic conduction compared to other SiC MOSFETs on the market. Combined with the recommended gate voltage of up to +18V (plus a 5V safety margin compared to the maximum rated voltage of +23V), Infineon's CoolSiC™ MOSFETs are superior to silicon IGBTs, superjunction MOSFETs and other SiC MOSFETs.

     Antiparallel diodes are reliable for hard switches, and the CoolSiC™ MOSFET family enables engineers to achieve maximum energy efficiency and simplify circuit design. CoolSiC™ MOSFETs offer new flexibility in the design of power factor correction (PFC) circuits, bidirectional topologies, and DC-DC or DC-AC circuits for any hard/soft switching.

     Infineon's EiceDRIVER™ gate driver IC fully meets the needs of CoolSiC™ MOSFET ultra-fast switching characteristics, and the combination of the two brings out the benefits of SiC: Increase efficiency, save space and weight, reduce the number of parts, improve system reliability, offer the possibility to reduce system costs and operating costs, and create new solutions for an energy-efficient world.