Infineon announced the expansion of its silicon-based gallium nitride (GaN) technology and product portfolio

     Infineon Technologies AG announced the expansion of its silicon-based gallium nitride (GaN) technology and product portfolio. Today, Infineon offers enhanced mode and cascaded mode GaN platforms optimized for high-performance devices requiring ultra-high energy efficiency, including switching power applications such as servers, telecommunications equipment, mobile power supplies, and consumer electronics such as Class D audio systems. GaN technology can dramatically reduce the size and weight of power supplies, which will open up new opportunities for GaN products in end-product markets such as ultra-thin LED televisions.

     Andreas Urschitz, President of Power Management and Diversified Markets at Infineon Technologies AG, said: "Infineon's silicon-based GaN portfolio, combined with the GaN platform acquired by International Rectifier and our partnership with Panasonic, has enabled Infineon to establish a technology leadership position in the promising GaN market. In line with our 'product to system' strategy, our customers now have the flexibility to choose enhanced or cascading modes depending on their device/system requirements. At the same time, Infineon is committed to developing surface mount devices (SMDS) and ics so that GaN technology can further leverage its superior performance in more compact Spaces. As a common example, using our GaN technology, the size and weight of the portable computer chargers currently on the market can be reduced to a quarter of their current size."

     After the expansion, Infineon's offerings will include specialized driver and controller ics that help leverage the benefits of GaN in a variety of topologies and at higher frequencies. At the same time, through the acquisition of International Rectifier Company, the broader patent portfolio, silicon-based GaN epitaxy process and 100V-600V technology have been further strengthened. In addition, through a strategic partnership with Panasonic, Infineon and Panasonic will jointly launch devices that combine Panasonic's normally closed (enhanced mode) silicon-based GaN transistor architecture with Infineon's Surface Mount Device (SMD) package to deliver easy-to-use, energy-efficient 600V GaN power devices, which will also provide customers with dual sourcing convenience.

     As a result, Infineon offers its customers comprehensive system knowledge and the industry's most comprehensive portfolio of GaN technologies and products. In addition, Infineon will be able to provide customers with normally closed GaN power devices in Infineon SMD packaging with the advantages of outstanding production processes, mass production capabilities and second source channels.

     Compared to silicon technology solutions, silicon-based GaN technology can improve power density and energy efficiency while reducing device size, making it ideal for applications ranging from consumer electronics such as TV power supplies and Class D audio amplifiers to SMPS used in servers and telecommunications equipment. According to the market research report released by IHS, the market for silicon substrate GaN technology for power semiconductors will grow at a compound annual growth rate (CAGR) of more than 50%, so that by 2023, its market capacity will increase from $15 million in 2014 to $800 million.