Infineon has announced the launch of an electric mobility power module that combines silicon and silicon carbide

     The combination of affordability with superior performance and efficiency is essential for expanding electric mobility to a wider market. Infineon Technologies AG is launching the HybridPACK™ Drive G2 Fusion, setting a new benchmark for power modules in traction inverters within the e-mobility sector. The HybridPACK Drive G2 Fusion is the inaugural plug-and-play power module that integrates Infineon’s silicon and silicon carbide (SiC) technology. This innovative technique offers an optimal equilibrium between performance and cost-effectiveness, enhancing the selection for inverter optimization.

     Silicon carbide (SiC) in power modules exhibits superior thermal conductivity, breakdown voltage, and switching speed compared to silicon, resulting in enhanced efficiency, albeit at a greater cost. The novel module reduces SiC content per vehicle while preserving vehicle performance and economy at a decreased system cost. For instance, system providers can achieve nearly the system efficiency of a complete SiC solution with merely 30 percent SiC and 70 percent silicon area.

     Infineon asserts that the new HybridPACK Drive G2 Fusion module exemplifies the company’s leadership in innovation within the automotive semiconductor sector. This technical advancement effectively integrates silicon carbide with silicon to meet the requirement for an enhanced e-mobility range. The well-designed module package provides an attractive cost-performance ratio compared to pure silicon carbide modules, without increasing system complexity for automotive system suppliers and vehicle manufacturers.

     The HybridPACK Drive G2 Fusion enhances Infineon’s HybridPACK Drive power module range and allows for rapid and straightforward integration into car components or modules without necessitating intricate modifications or setups. The HybridPACK Drive G2 Fusion module offers a maximum output of 220 kW within the 750 V category. It guarantees exceptional dependability across the complete temperature spectrum from -40 °C to +175 °C, along with enhanced thermal conductivity.

     Infineon’s CoolSiC™ technology and its silicon IGBT EDT3 technology, characterized by rapid turn-on capabilities, facilitate the utilization of either a single gate driver or dual gate drivers. This facilitates the seamless redesign of complete silicon or complete SiC-based inverters into a hybrid inverter. Infineon’s comprehensive proficiency in SiC MOSFET and silicon IGBT technology, power module packaging, gate drivers, and sensors facilitates the development of superior products that yield cost efficiencies at the system level. An illustration is the incorporation of Swoboda or XENSIV™ Hall sensors within the HybridPACK Drive package for enhanced precision and efficiency in motor control. During electronica 2024 in Munich, Germany, from November 12th to the 15th, Infineon will showcase the new HybridPACK Drive G2 Fusion at booth 502 in hall C3.