Infineon has introduced the MOTIX three-phase grid driver IC

     Developed specifically for automotive and industrial motor control applications, Infineon Technologies AG's MOTIX™ family offers a rich portfolio of products with varying levels of integration. To further expand its product lineup, Infineon introduced the MOTIX three-phase grid driver IC 6ED2742S01Q.

     The 160V Silicon on Insulator (SOI) gate driver integrates a power management unit (PMU) and is available in a QFN-32 package with bare pads on the bottom for excellent thermal conductivity. Because of this, the semiconductor device is easy to integrate, making it ideal for a variety of battery-powered industrial brushless direct current (BLDC) motor control drivers, including wireless power tools, robots, unmanned aerial vehicles, and light electric vehicles (LeVs).

     The 6ED2742S01Q integrated bootstrap diode is used to charge the external high-voltage side bootstrap capacitor. It has trickle charging circuit and supports 100% duty cycle. The main protection functions include undervoltage locking, overcurrent protection with configurable thresholds, fault communication, and automatic fault clearing. The output driver has a large pulse current buffer stage, and can avoid the risk of bridge arm through to the maximum extent. The DC component of VSS or COM can be selected when the current detection is amplified.

     MOTIX grid drivers directly drive high - and low-side grid channels, support up to 1A pull current and 2A perfusion current, and have independent undervoltage locking (UVLO). The device has a propagation delay of 100 ns, a minimum dead interval of 100 ns, and a built-in delay matching feature. As a result, MOTIX gate drivers enable high switching frequencies and reduce level switching losses. The bare pad at the bottom of QFN-32 package greatly reduces the thermal resistance and ensures the reliability of operation.

     The MOTIX 6ED2742S01Q is rated to operate in the temperature range -40°C to 125°C and easily drives single or multiple OptiMOS™ and StrongIRFET™ mosFeTs in parallel. The driver supports battery voltages from 10.8 V to 120 V.