Infineon has partnered with awl-electric to improve wireless power supply with gallium nitride (GaN) power semiconductors

     Infineon Technologies AG has partnered with the Canadian company AWL-Power, a pioneer in MHz resonant capacitance-coupled power transmission technology. Infineon's CoolGaN™GS61008P enables AWL-E to design breakthrough wireless power solutions that solve power problems in a wide range of industries.

     The collaboration integrates Infineon's advanced gallium nitride (GaN) technology with AWL-E's pioneering MHz resonant capacitance-coupled power transmission system to achieve industry-leading wireless power efficiency. Infineon's GaN transistor technology offers superior efficiency and power density while operating at higher switching frequencies. This allows AWL-E to extend its system life, save downtime and operating expenses, and enhance user-friendliness.

     The technology helps to raise the bar for interior experience and seat dynamics in the automotive industry. In industrial systems, it offers virtually unlimited design flexibility, especially in autonomous guided vehicles and robotics applications. In addition, the technology promotes a fully sealed system design that avoids the need for charging ports, thereby reducing battery usage worldwide.

     Infineon claims that the integration of AWL-E and its complementary capabilities illustrate how the characteristics of GaN, in particular its operation at  MHz frequencies, can revolutionize the potential applications of power transistors, resulting in more environmentally friendly and higher performance products.

     A pioneer in the power semiconductor market, Infineon is currently the only manufacturer with a comprehensive product and technology portfolio of silicon (including SJ MOSFETs and IGBTs), silicon carbide (including Schottky diodes and MOSFETs) and gallium nitride (e-mode HEMT) devices. The product portfolio includes bare modes, discrete devices and modules.