Infineon has successfully developed the world's first 300mm power Gan technology

     Infineon Technologies AG has confirmed the successful development of the world's first 300mm power gallium nitride (GaN) wafer technology. Infineon has become a global leader in successfully applying this revolutionary technology to mature and scalable high-volume production environments. This significant development will greatly stimulate the gallium nitride (GaN) -based power semiconductor market. Manufacturing chips on 300mm wafers is technically superior and more efficient than manufacturing chips on 200mm wafers, as the larger wafer diameter produces 2.3 times as many chips per wafer.

     Gallium nitride (GaN) power semiconductors are rapidly being used in industrial, automotive, consumer, computing and communication devices, artificial intelligence (AI) system power supplies, solar inverters, chargers and adapters, and motor control systems. Cutting edge GaN manufacturing technology improves device performance and has advantages in end-user applications by optimizing efficiency, reducing size, weight, and total cost. In addition, the use of 300mm manufacturing guarantees the best customer supply stability by enabling scalability.

     At its power fab in Ferrach, Austria, Infineon successfully produced 300 mm gallium nitride wafers on an integrated pilot line of its existing 300 mm silicon production facility. The company is leveraging its extensive expertise in existing 300mm silicon and 200mm gallium nitride manufacturing. Infineon will expand gallium nitride production capacity in line with market demand. The implementation of 300mm gallium nitride production will enable Infineon to influence the expanding gallium nitride market, which is expected to reach billions of dollars by the end of the decade.

     An inherent advantage of the 300mm gallium nitride technology is its ability to utilize existing 300mm silicon manufacturing equipment, as gallium nitride and silicon have significant similarities in manufacturing principles. Infineon's current high-volume 300mm silicon production line is ideally suited to test high-reliability gallium nitride technology for rapid deployment and efficient use of capital resources. Once fully scaled, 300 mm GaN production will result in GaN costing comparable to silicon at the RDS(on) level, indicating comparable costs for similar Si and GaN products.