Infineon introduces 650 V CoolSiC hybrid discrete devices for vehicles

     Infineon Technologies launches 650 V CoolSiC Hybrid Discrete devices for vehicles Includes A 50 A TRENCHSTOP™ 5 Fast switching IGBT (Insulated Gate Bipolar Transistor) and a CoolSiC Schottky diode to reduce cost, improve performance and reliability. Combining IGBTs with Schottky diodes provides a cost-effective balance for hard switching topologies and supports high integrity systems and bidirectional charging, making the device ideal for fast switching automotive applications such as on-board chargers (OBC), power factor correction (PFC), DC-DC and DC-AC converters.

     The integrated fast switching 50 A IGBT achieves disconnection performance similar to MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistor) and is superior to pure silicon solutions. Compared to conventional silicon carbide MOSFETs, the plug-and-play solution reduces time to market and achieves 95 to 97 percent system efficiency at a lower cost. In addition, CoolSiC Schottky diodes reduce on-off and recovery losses. The device is better suited for hard switching and reduces losses by 30% compared to pure silicon designs. The diode has low cooling temperature requirements and therefore provides a cost-effective balance at the system level.

     Chinese OBC supplier Shenzhen VMAX New Energy Co., LTD. (VMAX) is using Infineon's latest CoolSiC hybrid separator for its next-generation OBC/DC-DC system. The company develops automotive-grade electronics to provide customers with highly reliable OBC and DC-DC converters.

     Xu Jinzhu, R&D Director of VMAX, said: "VMAX's philosophy is to continuously create maximum value for customers. The collaboration with Infineon provides the basis for the realization of this concept. CoolSiC hybrid separators help VMAX simplify drive design, accelerate product development, reduce costs and improve system stability. The integrated silicon carbide diode has no reverse recovery charge, which further optimizes the system's Electro Magnetic Compatibility (EMC) characteristics. This brings greater performance and cost performance to topologies such as topless switching PFC and DAB (Dual Active Bridge Series Dual Active Bridge)."

     JurgenSpankuch, Vice President, High Power Discrete Devices and Chips Division, Infineon Automotive, said: "We are delighted to be working with VMAX. This project will further highlight our leading position in car charger applications."