Infineon introduces 650 V CoolSiC™ MOSFETs

     Infineon Technologies AG has further expanded its silicon carbide (SiC) portfolio with the launch of 650V devices. Its newly released CoolSiC™ MOSFETs address the growing demand for energy efficiency, power density and reliability in a wide range of applications, including servers, telecommunications and industrial SMPS, solar systems, energy storage and battery formation, uninterruptable power supplies (UPS), motor control and drive, and electric vehicle charging.

     "With this new product launch, Infineon completes its portfolio of silicon-based, silicon carbide and gallium nitride power semiconductors in the 600V/650V segment," said Steffen Metzger, Senior Director of the High-voltage Conversion business at Infineon's Power Management and Diversified Markets Division. "This highlights our unique position in the market: Infineon is the only manufacturer on the market that can offer a full range of power products covering materials such as silicon, silicon carbide and gallium nitride. The new CoolSiC™ family supports our commitment to becoming the number one supplier of industrial SiC MOSFET switches."

     The 650 V CoolSiC™ MOSFET device is rated in the 27 mΩ TO 107 mΩ range and can be used in either the typical TO-247 3-pin package or the lower-switching loss TO-247 4-pin package. In contrast to all CoolSiC™ MOSFETs released in the past, the new 650V series is based on Infineon's advanced trench semiconductor technology. By maximizing the powerful physical properties of silicon carbide, the device has excellent reliability, outstanding switching and on-off losses. In addition, they have the highest transconductance level (gain), threshold voltage (Vth) of 4V, and short-circuit robustness. All in all, the trench technology can achieve the lowest loss in the application and the best reliability in operation without compromising.

     Compared to other silicon-based and silicon carbide solutions on the market, the 650 V CoolSiC™ MOSFETs offer an attractive advantage: improved switching efficiency and superior reliability at higher switching frequencies. These devices have excellent thermal performance thanks to their extremely low temperature-dependent on-resistance (RDS(on)). In addition, they feature robust body diodes that have a very low reverse recovery charge: about 80% lower than the best superjunction CoolMOS™ MOSFETs. Its commutation robustness makes it easy to achieve 98% overall system efficiency, such as through continuous on-mode totem pole power factor correction (PFC).

     To simplify application design with 650 V CoolSiC™ MOSFETs and ensure efficient device operation, Infineon also offers dedicated single - and dual-channel electrically isolated EiceDRIVER™ gate driver ics. This solution, which integrates CoolSiC™ switches and dedicated gate driver ics, helps reduce system costs and total cost of ownership, as well as improve energy efficiency. CoolSiC™ MOSFETs work seamlessly with other Infineon EiceDRIVER™ gate driver family ics.