Infineon introduces CoolSiC MOSFET 400 V, redefining the power density and efficiency of AI server power supplies

     As artificial intelligence (AI) processors increasingly demand more power, server power supplies (Psus) must deliver higher power without exceeding the prescribed size of server racks, mainly due to the surge in energy demand for advanced Gpus. By the end of the decade, each advanced GPU chip could consume 2 kilowatts or more. These requirements, together with the emergence of more demanding applications and related specific customer needs, have led Infineon Technologies AG to develop SiC MOSFET products with voltages below 650 V.

     Now Infineon is introducing the new CoolSiC™ MOSFET 400 V series, based on the second generation (G2) CoolSiCTM technology announced earlier this year. The new MOSFET portfolio was developed specifically for the AC/DC class of AI servers and complements Infineon's recently announced PSU roadmap. This family of devices is also suitable for solar and energy storage systems (ESS), variable frequency motor control, industrial and auxiliary power supplies (SMPS), and residential building solid state circuit breakers.

     Richard Kuncic, Head of Infineon's Power Systems business line, said: "Infineon offers a rich portfolio of high-performance MOSFETs and GaN transistors that meet the demanding design and space requirements of AI server power supplies. We are committed to supporting our customers with advanced products such as the CoolSiC™ MOSFET 400 V G2 to drive the highest energy efficiency in advanced AI applications."

     Compared to existing 650 V SiC and Si MOSFETs, the new series has ultra-low conduction and switching losses. The AC/DC stage of this AI server power unit uses multiple PFC levels to achieve power density of more than 100 W/in³ and efficiency of 99.5%, which is 0.3 percentage points higher than the solution using 650 V SiC MOSFETs. In addition, the system solution is enhanced by the use of CoolGaN™ transistors at the DC/DC level. With this high-performance MOSFEt-transistor combination, the power supply delivers more than 8 kW of power, a power density increase of more than three times compared to existing solutions.

     The new MOSFET portfolio comprises a total of 10 products: five RDS(on) grade (11 to 45 mΩ) products in Kelvin Source TOLL and D²PAK-7 packages as well. XT encapsulation interconnect technology. Its drain-source breakdown voltage is 400 V at Tvj = 25°C, making it ideal for use in stage 2 and 3 converters and synchronous rectification. These components are highly robust under harsh switching conditions and have passed 100% avalanche testing. Highly robust CoolSiC™ technology and. The combination of XT interconnect technology enables these semiconductor devices to cope with power spikes and transients caused by sudden changes in AI processor power requirements, and with connection technology and low positive RDS(on) temperature coefficients, perform well even at high junction temperatures.