Infineon introduces CoolSiC™ Schottky Diode 2000 V

     Nowadays, many industrial applications can transition to higher power levels by increasing the DC bus voltage while seeking to minimize power losses. To meet this demand, Infineon Technologies AG, a global leader in semiconductors for power systems and the Internet of Things, introduced the CoolSiC™ Schottky Diode 2000 V G5, the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V. Suitable for applications with DC link voltages up to 1500 VDC and rated currents from 10 A to 80 A, this product family is perfect for high DC bus voltage applications such as photovoltaics and EV charging.

     The product family is packaged in the TO-247 PlUS4-HCC package with A creepage distance of 14 mm and a clearance distance of 5.4 mm, combined with a rated current of up TO 80 A, significantly increasing power density. It enables developers to achieve higher power levels in applications with half the number of components as a 1200 V SiC solution. This simplifies the overall design and enables a smooth transition from a multilevel topology to a 2-level topology.

     In addition, CoolSiC™ Schottky diode 2000V G5 is used. XT interconnect technology greatly reduces thermal resistance and impedance, enabling better thermal management. In addition, HV-H3TRB reliability tests also demonstrated the diode's tolerance to humidity. The diode has no reverse or forward recovery current, and has the characteristics of forward low voltage to ensure better system performance.

     The 2000 V diode series is a perfect fit for Infineon's CoolSiC™ MOSFET 2000 V in the TO-247 PlUS-4 HCC package, which will be launched in Spring 2024. The CoolSiC™ diode 2000 V portfolio will be expanded by offering the TO-247-2 package, which will be available in December 2024. In addition, Infineon offers a portfolio of gate drivers that match the CoolSiC™ MOSFET 2000 V.