Infineon introduces a new generation of silicon carbide technology, CoolSiC™ MOSFET G2, to promote low carbon, high performance systems

     Infineon Technologies introduces a new generation of silicon carbide (SiC) MOSFET channel gate technology, opening a new chapter in power systems and energy conversion. Compared to the previous Generation, Infineon's new CoolSiC™ MOSFET 650 V and 1200 V Generation 2 technologies improve key MOSFET performance metrics such as energy and charge storage by 20%, while ensuring quality and reliability. Further promote the process of decarbonization.

     CoolSiC™ MOSFET Generation 2 (G2) technology continues to leverage the performance benefits of silicon carbide to improve efficiency in the power conversion process by reducing energy loss. This brings great advantages to customers in power semiconductor applications such as photovoltaics, energy storage, DC EV charging, motor drives and industrial power supplies. Compared to previous generations, electric vehicle DC fast charging stations with CoolSiC™ G2 can reduce power loss by up to 10% and achieve higher charging power without compromising form factor. Traction inverters based on CoolSiC™ G2 devices further increase the range of electric vehicles. In the renewable energy sector, solar inverters with CoolSiC™ G2 can achieve a smaller size while maintaining high power output, resulting in lower cost per watt.

     Dr Peter Wawer, President of Zero Carbon Industrial Power at Infineon Technologies, said: "The big trend is towards new and efficient ways to generate, transmit and consume energy. Infineon takes silicon carbide performance to the next level with CoolSiC™ MOSFET G2. The new generation of silicon carbide technology enables manufacturers to more quickly design systems that are cheaper, more compact, more reliable, and more efficient, saving energy while reducing carbon dioxide emissions per watt on site. This is a testament to Infineon's continued commitment to low-carbon and digital innovation in the industrial, consumer and automotive sectors."

     Infineon's pioneering CoolSiC™ MOSFET grooved gate technology drives the development of a high-performance CoolSiC™ G2 solution that enables more optimized design choices with greater efficiency and reliability compared to current SiC MOSFET technologies. Combined with award-winning. With XT packaging technology, Infineon further enhances the potential of CoolSiC™ G2-based designs with higher thermal conductivity, better package control and better performance.

     With all the key power technologies in silicon, silicon carbide and gallium nitride (GaN), Infineon offers flexible design and leading application knowledge to meet the expectations and demands of modern design. In the drive to decarbonize, innovative semiconductors based on wide band gap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) have become key to efficient energy use.