Infineon introduces the 1200V EasyPACK 2B power module

     Infineon has increased the hybrid silicon carbide (SiC) and IGBT power module EasyPACK 2B to 1200V using an advanced neutral-point-clamped ANPC topology. The module is optimized for the optimal point loss of CoolSiC MOSFET and TRENCHSTOP IGBT4 chipsets, respectively, with higher power density and switching frequencies up to 48 kHz for next-generation 1500V PV and energy storage applications.

     In contrast to the traditional three-level midpoint clamp topology, the ANPC inverter design supports uniform loss distribution among semiconductor devices. The company says the new ANPC topology achieves more than 99 percent system efficiency. The use of the hybrid Easy 2B power module in the DC/AC stage of a 1500V solar string inverter allows for smaller coils and lower switching frequency devices that ultimately weigh significantly less than phase inverters with pure silicon components. In addition, the loss of SiC is less than that of the silicon process, so smaller and cheaper heat sinks can be used, resulting in a smaller inverter size and system cost savings. Compared with the five-level topology, the three-level design reduces the complexity of inverter design.

     The Easy 2B standard package for power modules features low stray inductance. Infineon says that the integrated diode of the CoolSiC MOSFET chip ensures low loss continuity without the need for other SiC diode chips. In addition, Infineon says that the NTC temperature sensor in the module helps to monitor the system temperature, while it also takes advantage of the Press-FIT crimping process technology to reduce the assembly time of the equipment.