Infineon introduces the 600V CoolMOS S7 superjunction MOSFETs for low-frequency applications

     Infineon Technologies AG has successfully developed solutions that meet the highest efficiency and quality requirements. For MOSFET low-frequency switching applications, the new 600 V CoolMOS™ S7 series delivers leading power density and energy efficiency.

     Key features of the CoolMOS™ S7 series include optimized conduction performance, improved thermal resistance and high pulse current capability, with the highest quality standards. The device is suitable for applications such as active bridge rectifiers, inverters, PLCS, power solid-state relays and solid-state circuit breakers. In addition, 10mΩ CoolMOS™ S7 MOSFETs are the smallest RDS(on) devices in the industry.

     This product family has been developed specifically for low-frequency switching applications to reduce their on-off losses and ensure the fastest response and highest efficiency. CoolMOS™ S7 devices even achieve lower RDS(on) x A than CoolMOS™ 7 products, thus successfully offsetting switching losses and ultimately achieving on-resistance reduction and cost savings. For high-voltage switches, CoolMOS™ S7 products have the lowest on-resistance (RDS(on)) on the market.

     In addition, the 10 mΩ chip comes in an innovative top-cooled QDPAK package and the 22 mΩ chip comes in an advanced small TO pin-less (TOLL) SMD package. These MOSFETs enable economical, simplified, compact, modular and efficient designs. The system is designed to easily meet regulatory requirements and energy efficiency certification standards (such as Titanium® for SMPS), while also meeting power budgets, reducing the number of parts and radiator requirements, while reducing the total cost of ownership (TCO).