Infineon introduces the 62mm CoolSiC™ module, opening up new applications for silicon carbide

     Infineon Technologies AG has added a 62mm industry standard module package to its 1200 V CoolSiC™ MOSFET module family. It uses a proven 62mm device half-bridge topology design, as well as grooved gate chip technology, to open the door for medium power applications in silicon carbide above 250kW (the power density limit of silicon IGBT technology in 62mm packages). Based on the traditional 62mm IGBT module, the application range of silicon carbide is extended to solar energy, servers, energy storage, electric vehicle charging piles, traction, and commercial induction induction stoves and power conversion systems.

     The 62mm module is equipped with Infineon's CoolSiC MOSFET chip for extremely high current density. Its extremely low switching and conduction losses minimize the size of the cooling device. Smaller magnetic components can be used when operating at high switching frequencies. With Infineon's CoolSiC chip technology, customers can design inverters in smaller sizes, thereby reducing overall system costs.

     With a 62mm standard substrate and threaded interfaces, it has a highly robust structural design that maximizes and increases system availability while reducing maintenance costs and loss of downtime. Excellent temperature cycling capability and continuous operating temperature of 150°C (Tvjop) for excellent system reliability. Its symmetrical internal design makes the upper and lower switches have the same switching conditions. The Pre-Processed Thermal Interface Material (TIM) configuration is optional to further improve the thermal performance of the module.