Infineon introduces the CoolGaN™ IPS family for 30 W-500 W power level applications

     Power switches made of gallium nitride (GaN), a wide band gap (WBG) material, have opened a new era in power electronics with their excellent efficiency and high switching frequency. In line with this development, Infineon Technologies AG introduces the CoolGaN™ IPS family of integrated power stages (IPS), the latest addition to its extensive portfolio of WBG power components. IPS 'basic product portfolio includes half-bridge and single-channel products targeted at low to medium power applications such as chargers, adapters, and other switching power supplies (SMPS).

     Representative Product 600 V CoolGaN Half Bridge IPS IGI60F1414A1L suitable for low to medium power range, small and lightweight design applications. The 8x8 QFN-28 package is enhanced for heat dissipation and provides an extremely high power density for the system. The product includes two 140 mΩ / 600 V CoolGaN Enhanced (e-mode) HEMT switches and special high and low gate drivers for electrical isolation from Infineon's EiceDRIVER family.

     The isolated gate driver has two digital PWM inputs, making the IGI60F1414A1L easier to control. In order to achieve the goals of reducing development time, reducing system bill of materials items, and reducing total cost, the use of integrated isolation features, clear separation of digital and power ground, and simplified PCB configuration are indispensable elements. The gate driver uses Infineon's single-chip coreless transformer (CT) technology to effectively isolate the input from the output. High speed characteristics and outstanding stability are guaranteed even under ultra-fast switching transient voltages of up or down over 150 V/ns.

     The switching characteristics of the IGI60F1414A1L can be easily implemented depending on the application by some passive elements of the gate path such as the resistance vessel. For example, this feature enables current or voltage rate optimization to reduce electromagnetic interference (EMI) effects, steady-state gate current adjustment, and negative gate voltage drives for stable operation in hard toggle switch applications.

     In addition, the high accuracy and stable transmission latency of the system-level package integration and gate drivers allow the IGI60F1414A1L to provide the lowest system dead time. This will help maximise system efficiency and take the power density of charger and adapter solutions to even higher levels, up to 35 W/in³. The flexible, simple and fast design features are also suitable for other applications such as LLC resonant topologies, motor drives, etc.