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Infineon introduces the new 4.5kV XHP 3 IGBT module

Dec 29 2023 2023-12 Power Infineon Technologies
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Infineon Technologies AG has introduced the 4.5kV XHP 3 IGBT module, which aims to fundamentally change the landscape of medium voltage frequency converters (MVD) and transportation applications using two - and three-level topologies and 2000 V to 3300 V AC voltages. The new semiconductor device will benefit a wide range of applications, including large conveyor belts, pumps, high-speed trains, locomotives and commercial, engineering and agricultural vehicles (CAVs).

      There is a clear trend towards smaller IGBT modules in many applications, as well as moving complex designs up the chain. In line with the global trend towards miniaturization and integration, Infineon Technologies has introduced the 4.5kV XHP 3 IGBT module, which is designed to fundamentally change the landscape of medium voltage frequency converters (MVD) and transportation applications using two - and three-level topologies with AC voltages from 2000 V to 3300 V. The new semiconductor device will benefit a wide range of applications, including large conveyor belts, pumps, high-speed trains, locomotives and commercial, engineering and agricultural vehicles (CAVs).

 

     The XHP series includes A TRENCHSTOP IGBT4450 A half-bridge IGBT module with an emitter-controlled continuation diode and a 450 A diode half-bridge module with an emitter-controlled E4 diode. The insulation voltage of both modules is increased to 10.4 kV. This combination helps simplify the parallel and reduce the size without losing efficiency. Previously, parallel switch modules required complex busbars, which complicated the design and increased inductance. The innovative design of the XHP series simplifies parallel operation by placing the modules side by side, which also allows the modules to be connected in parallel with only one DC bus.

 

     The 4.5kV XHP series also enables developers to reduce the number of components used during the design process. The traditional IGBT solution to the 3-level scheme has multiple single IGBT switches and half-bridge diodes, while the design using the new device requires only two half-bridge switches and a smaller half-bridge diode, which is a significant advance for driver integration.

 

     The combination of FF450R45T3E4_B5 dual switch and DD450S45T3E4_B5 dual diode can significantly save costs and reduce the board area. For example, Infineon's past IGBT solutions required four 140 x 190 mm² or 140 x 130 mm² switches and a 140 x 130 mm² dual diode. The new XHP series reduces the number of components required to two 140 x 100 mm² dual switches and a smaller 140 x 100 mm² dual diode.

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