Infineon introduces the new 650 V CoolMOS™ CFD7 for greater efficiency and power density

     In the design of SMPS for industrial applications, the latest technology trends will take into account the need for high efficiency, high power density and rising bus voltage, thus triggering the need for 650V breakdown voltage power devices. The 650 V CoolMOS™ CFD7 product family from Infineon Technologies meets these needs. This device is suitable for resonance topologies in soft switching applications, such as communication power supplies, servers, solar energy, and non-on-board EV charging.

     The new 650 V device extends the voltage range of the prestigious CoolMOS CFD7 family and is the successor to the CoolMOS CFD2. The new 650 V product can be combined with LLC and zero-voltage switching phase-shift full bridge topologies, offering several advantages over previous generations. The 50V increase in breakdown voltage, combined with integrated high-speed bulk diode technology and improved switching efficiency, makes this product family ideal for contemporary designs. The extremely low reverse recovery charge coupled with excellent thermal properties also adds further advantages.

     The switching loss and RDS(on) overheat dependence are greatly reduced, and this product family offers very good hard rectifier durability. Thanks to improved gate charge (Qg) and fast switching performance, the 650 V CoolMOS CFD7 series improves efficiency across the load range. In major SMPS applications, these MOSFETs offer excellent light-load efficiency and improved full-load efficiency compared to competing products. In addition, the lowest RDS(on) in the class allows customers to increase the power density of SMPS at a competitive price.