Infineon introduces the new 650 V CoolSiC™ Hybrid IGBT single tube

     Infineon Technologies AG introduces the CoolSiC™ Hybrid IGBT single tube with a 650 V turn-off voltage. The new CoolSiC Hybrid IGBT combines the key benefits of the 650 V TRENCHSTOP™ 5 IGBT and the CoolSiC™ Schottky Barrier diode with excellent switching frequency and lower switching losses, especially for DC-DC and power factor correction (PFC) applications. Common applications include: battery charging infrastructure, energy storage systems, photovoltaic inverters, uninterruptible power supplies (UPS), and server and telecommunication switching power supplies (SMPS).

     Because the IGBT is anti-parallel SiC Schottky barrier diode, the CoolSiC™ Hybrid IGBT can significantly reduce switching losses at virtually constant dv/dt and di/dt values. Compared to standard Si diode solutions, the new products can reduce Eon by up to 60% and Eoff by 30%. It can also increase the switching frequency by at least 40% while the output power remains unchanged. The higher switching frequency helps to reduce the size of passive devices, which in turn reduces material costs. The Hybrid IGBT is a direct replacement for the TRENCHSTOP™ 5 IGBT and offers a 0.1% efficiency improvement per 10 kHz switching frequency without the need for redesign.

     The HybridIGBT family serves as a bridge between full Si solutions and high performance SiC MOSFET designs. Hybridigbt improves electromagnetic compatibility and system reliability compared to full Si designs. Due to the unipolar nature of the SiC Schottky barrier diode, the diode can be switched on and off quickly without the risk of severe oscillation and parasitic conduction. The range is available in TO-247-3 or TO-247-4 pin Kelvin Emitter packages. The fourth pin of the Kelvin Emitter package enables ultra-low inductance gate emitter control loops and reduces total switching losses.