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Infineon introduces the new EiceDRIVER™ 1200V half-bridge driver IC family

Jun 11 2023 2023-06 Semiconductors Infineon Technologies
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Infineon Technologies has further expanded its product portfolio with the EiceDRIVER™ 6ED223xS12T series of 1200V silicon-on-insulator (SOI) three-phase gate drivers with the EiceDRIVER 2ED132xS12x series.

     Infineon Technologies has further expanded its product portfolio with the EiceDRIVER™ 6ED223xS12T series of 1200V silicon-on-insulator (SOI) three-phase gate drivers with the EiceDRIVER 2ED132xS12x series. The half-bridge configuration of the driver IC series complements the existing 1200V SOI series, providing customers with more choice and design flexibility. The enhanced current output capability increases the suitability of this portfolio to higher system power levels.

 

     These devices provide industry-leading negative VS negative transient voltage immunity, breakdown protection, undervoltage lock protection and fast overcurrent protection. Not only do these features allow for fewer devices and a more robust design, but their compact form factor is suitable for high-power applications such as commercial HVAC systems, heat pumps, servo drives, industrial inverters, and pumps and fans with output power up to 10 kW.

 

     The series of half-bridge driver ics is available in four models, each in two different package technologies: 2ED132xS12M in DSO 16 300 mil package, +2.3 A/-4.6 A current capability; The 2ED132xS12P comes in a DSO-20 300 mil package with + 2.3A / -2.3A current drive capability. The series has good switching performance, and the package retains sufficient creepage distance and electrical clearance.

 

     The series integrates low-resistance (30 Ω) bootup diodes, provides ultra-fast and accurate (±5% tolerance) overcurrent protection (OCP), and enables input, fault output, and programmable fault reset with separate logic (VSS) and output ground (COM) pins. The 2ED132xS12M variant also has the additional functionality of active Miller Clamp (AMC) and Short-circuit clamp (SCC).

 

     Infineon's SOI technology eliminates parasitic thyristor structures and improves negative transient voltage robustness and immunity on the VS pin, which ensures tolerance to 100 V -VS transients over repeated 700 ns pulse cycles. In addition, these semiconductor devices are RoHS compliant and have electrostatic protection (ESD) and moisture resistance.

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