Data centers currently account for more than 2 percent of global energy consumption. Driven by AI, this figure is expected to grow to around 7% by 2030, equivalent to the current energy consumption of all of India. Achieving efficient power conversion from the grid to the core is critical to achieving superior power density, resulting in improved computing performance while reducing total cost of ownership (TCO).
Infineon Technologies AG is therefore introducing the TDM2354xD and TDM2354xT dual phase power modules with excellent power density for use in high-performance AI data centers. These modules enable true vertical power transmission (VPD) and deliver an industry-leading current density of 1.6A/mm2. Infineon also introduced the TDM2254xD biphase power module earlier this year.
Rakesh Renganathan, Vice President of Power ics at Infineon Technologies, said: "We are proud to be powering high-performance AI data centers with our TDM2354xT and TDM2354xD VPD modules. These semiconductor devices will further enhance system performance with Infineon's trademark quality and robustness, resulting in better TCO for the data center. Our industry-leading power device and packaging technologies, combined with our extensive systems' expertise, will further advance high-performance and green computing as part of our mission to drive digitization and decarbonization."
Thanks to Infineon's powerful OptiMOS™ 6-channel technology, an on-chip package that enables ultra-high power density through improved electrical and thermal efficiency, and new inductor technology, the TDM2354xD and TDM2354xT modules are slimmer in form, enabling true vertical power transmission. These two modules set new standards for power density and quality, increasing the computing performance and efficiency of AI data centers. The TDM2354xT module supports A maximum current of 160 A and is the industry's first cross-inductance regulator (TLVR) module with a small form factor of 8 x 8 mm². When combined with Infineon's XDP™ controller, both modules provide extremely fast transient response and reduce on-board output capacitance by up to 50%, further increasing system power density.
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