Infineon joins hands with YingFeiyuan to expand the new energy vehicle charging market

     Power semiconductors based on silicon carbide (SiC) offer many advantages such as high efficiency, high power density, high voltage resistance and high reliability, creating opportunities to enable new applications and advance innovation in charging station technology. Infineon Technologies AG has announced a partnership with China's new energy vehicle charging market leader Yingfeiyuan. Infineon will supply the company with an industry-leading 1200 V CoolSiC™ MOSFET power semiconductor device to improve the efficiency of electric vehicle charging stations.

     Dr. Peter Wawer, President of Infineon's Zero-Carbon Industrial Power Division, said: "The cooperation between Infineon and Infineon in the field of electric vehicle charging solutions will provide outstanding system-level technical solutions for the local electric vehicle charging industry. It will significantly improve charging efficiency, speed up charging, and create a better user experience for electric vehicle owners."

     Qiu Tianquan, President of Yingfei Yuan China, said: "By partnering with Infineon, which has been making continuous progress in SiC products for more than 20 years and has strong integrated technology strength, Yingfei Yuan will continue to consolidate and maintain its technological leadership in the industry by adopting the most advanced product processes and design solutions. We can also set a new benchmark for the charging efficiency of new energy vehicle DC charging solutions, thereby creating more convenience and unique value for customers and promoting the healthy development of the electric vehicle charging industry."

     Due to its high power density, SiC is suitable for the development of high-performance, lightweight and compact charging solutions, which are particularly beneficial for superchargers and ultra-compact wall-mounted DC charging stations. SiC technology can improve the efficiency of electric vehicle charging stations by 1% compared to traditional silicon technology, thereby reducing energy consumption and operating costs. Taking a 100 kW charging station as an example, this translates to a savings of 1 kWh of electricity, an annual cost savings of 270 euros, and a reduction of 3.5 tons of carbon emissions. This will greatly promote the application of SiC power devices in electric vehicle charging modules.

     As one of the first SiC power semiconductor manufacturers to apply trench gate technology to transistors, Infineon has introduced advanced designs that help increase the reliability of charging solutions. These devices have high threshold voltages and simplify the gate drive. CoolSiC MOSFET technology has passed marathon stress tests and gate voltage jump stress tests before launch and is regularly monitored after launch to ensure maximum gate reliability.

     By using Infineon's 1200 V CoolSiC MOSFETs, the 30 kW DC charging module enables a wide constant power range, high power density, minimum electromagnetic radiation and interference, high protection performance and high reliability. This enables it to not only meet the fast charging needs of most electric vehicles, but also achieve 1% higher efficiency than other solutions on the market. This has helped to significantly reduce energy consumption and carbon emissions, reaching global leading levels.