Infineon launched a new 750V EDT2 IGBT for discrete traction inverter

     Infineon Technology Co., Ltd. announced the launch of a new EDT2 IGBT packaged with TO247PLUS. This device has been optimized specifically for the split automotive traction inverter, which further enriches the product lineup of Infineon vehicle specification level split high-voltage devices. Thanks to its excellent quality, the EDT2 IGBT conforms to and exceeds the stress test standard AECQ101 for vehicle specification level semiconductor discrete devices, which can greatly improve the performance and reliability of the inverter system. The IGBT adopts the design of automobile level micro groove field stop unit, and the technology used has been successfully applied to many inverter modules such as EasyPACK 2B EDT2 and HybridPACK

     In order to meet the requirements of target applications, Infineon's new EDT2 IGBT product series has excellent short-circuit resistance. In addition, its TO247PLUS package has a larger creepage distance, which is more conducive to system design. At the same time, the EDT2 technology is specially optimized for the traction inverter. The breakdown voltage is 750 V, which can support battery voltage up to 470 VDC, and significantly reduce switching and conduction losses.

     When the split EDT2 IGBT operates at a temperature of 100 ° C, the rated current is usually 120 A or 200 A. Both models have extremely low forward voltage. Compared with the previous generation, the conduction loss is reduced by 13%. Among them, the AIKQ200N75CP2 with a rated current of 200A is outstanding among the separated IGBT products packaged with TO247Plus. Therefore, only a small number of parallel devices are needed to achieve the set target power level, while improving the power density and reducing the system cost.

     In addition, the parameter distribution of EDT2 IGBT is very compact. The difference between the typical value of collector emitter saturation voltage (Vce (sat)) and the maximum value is less than 200 mV, and the difference between the gate threshold voltage (VGEth) is less than 750 mV. The saturation voltage is a positive temperature coefficient. In conclusion, these features help to easily realize parallel operation, thus improving the system flexibility and power scalability of the final design. In addition, this IGBT device also has the advantages of stable switching characteristics, low gate charge (QG) and 175 ° C maximum junction temperature (Tvjop)