Semiconductors
Passive Components
Sensors
Power
Optoelectronics
Infineon Technologies introduces the 750V G1 discrete CoolSiC™ MOSFETs to meet the growing demand for higher energy efficiency and power density in industrial and automotive power applications. The product family includes industrial and vehicle grade SiC MOSFETs optimized for totem pole PFC, T-type, LLC/CLLC, Dual Active Bridge (DAB), HERIC, buck/boost, and phase-shifted Full bridge (PSFB) topologies. These MOSFETs are suitable for typical industrial applications (including electric vehicle charging, industrial drives, solar and energy storage systems, solid state circuit breakers, UPS systems, servers/data centers, telecommunications, etc.) and the automotive sector (including on-board chargers (OBCs), DC-DC converters, etc.).
The CoolSiC MOSFET 750 V G1 technology features excellent RDS(on) x Qfr and superior RDS(on) x Qoss Excellence (FOM) for ultra-high efficiency in both hard and soft switching topologies. Its unique combination of high threshold voltage (VGS(th), typical value 4.3V) and low QGD/QGS ratio is highly robust against parasitic conduction and enables unipolar gate drive, which not only increases power density but also reduces system cost. All semiconductor devices use Infineon's own chip connection technology, which gives the chip excellent thermal resistance at the same bare chip size. The highly reliable gate oxide design coupled with Infineon's certification standards guarantees long-term stable performance.
With RDS(on) of 8 to 140 mΩ at 25°C, the new CoolSiC MOSFET 750 V G1 product family meets a wide range of needs. It is designed with low conduction and switching losses, greatly improving the overall system efficiency. The innovative package further reduces thermal resistance, helps improve heat dissipation and optimizes the power loop inductance within the circuit, reducing system costs while achieving high power density. It is worth mentioning that the product family is equipped with an advanced QDPAK top-cooled package.
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