Innoscience Technologies has enhanced its portfolio with the introduction of two new 100 v automotive-grade GaN devices. INN100W135A-Q (RDS), max = 13.5Ω) and the more compact INN100W800A-Q (RDS(top),max = 80Ω) are both AEC-Q101 certified and optimized for LiDAR, high power density DC-DC converters and Class D audio applications in the automotive industry.
The INN100W135A-Q and ultra-compact INN100W800A-Q come in x 1.63 mm and 0.9 mm 2.13 mm 0.9 mm WLCSP packages, respectively, offering significant size and power efficiency advantages. Both devices have been carefully designed to meet the needs of L2 + / L3 assisted driving systems, with switching rates increased by 13 times and pulse widths reduced to one-fifth of silicon alternatives. Parameter path and qos show 1.5 to 3 times enhancement compared to their silicon equivalents. This will result in mid-to-long distance recognition of 200 to 300 meters, which is critical for enhanced driver assistance and autonomous driving applications.
Innoscience says the devices are designed to meet the growing demand for efficiency and precision in driver assistance and autonomous driving technologies. Due to their enhanced performance, GaN devices are rapidly replacing traditional silicon in necessary automotive applications. In LiDAR applications, Gan is believed to provide higher resolution and greater detection range compared to traditional silicon technology, while minimizing power loss and heat gain.
These automotive-grade GaN products are currently in mass production and volume orders are being processed to meet demand. Comprehensive product specifications and simulation models are available on the Innoscience website, where customers can also request samples and further information.
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