Littelfuse introduces SiC Schottky diodes

Littelfuse introduces two second generation 650V, AEC-Q101-compliant silicon carbide (SiC) Schottky diode families. The LSIC2SD065CxxA and LSIC2SD065AxxA series silicon carbide Schottky diodes are available in a variety of current rating options (6A, 8A, 10A, 16A or 20A). They offer power electronics system designers a variety of performance benefits, including negligible reverse recovery currents, high surge protection, and a maximum operating junction temperature of 175°C, making them ideal for applications requiring enhanced efficiency, reliability, and thermal management.

Compared to standard silicon PN junction diodes, the 650V series silicon carbide Schottky diodes support significantly reduced switching losses and significantly increased efficiency and durability of power electronics systems. Because less energy is dissipated than silicon-based solutions and can operate at higher junction temperatures, heat sinks and systems require less space. This brings the benefits of a more compact, energy-efficient system to the end user and is expected to reduce the total cost of ownership.

Typical applications for 650V series silicon carbide Schottky diodes include:

● Power Factor Correction (PFC)
● Buck/boost phase of DC-DC converter
● Inverter level continuous current diode
● High-frequency output rectification
● Electric Vehicle (EV) applications

"These new families are our first 650V silicon carbide Schottky diode products; All of our previous releases have been rated at 1200V, so we can now meet a wider range of application needs and complement our Littelfuse MOSFET portfolio further." Christophe Warin, product marketing Manager for silicon carbide at Littelfuse's semiconductor business unit. "These diodes are AEC-Q101 compliant and therefore superior to their peers in terms of quality and reliability."

The 650V series silicon Carbide Schottky diodes offer the following key advantages:

● AEC-Q101 compliant diodes deliver superior performance in demanding applications.
● Much lower switching losses than silicon bipolar diodes and fast switching operations independent of temperature make these devices ideal for high-frequency power switching.
● Positive temperature coefficient for safe operation and easy parallel operation.
● Maximum operating junction temperature of 175°C provides greater design margin and more relaxed thermal management requirements.