Microchip Launches Silicon Carbide Power Solution with the Strongest Solidification Resistance in the Industry

     Nowadays, energy-saving charging systems that provide power for commercial vehicle propulsion systems, as well as auxiliary power supply systems, solar inverters, solid-state transformers and other transportation and industrial applications, all rely on high-voltage switching power supply equipment. To meet these needs, Microchip Technology Inc announced to expand its silicon carbide product portfolio, introducing a series of 1700V silicon carbide MOSFET chips, discrete devices and power modules with high efficiency and reliability.

     Microchip's 1700V silicon carbide technology is a substitute for silicon IGBT. Because the loss of silicon IGBT limits the switching frequency, the previous technical requirements require designers to compromise on performance and use complex topology. In addition, the size and weight of power electronic systems become bloated due to transformers. Only by increasing the switching frequency can the size be reduced.

     The newly launched silicon carbide series products enable engineers to abandon IGBT and use two-level topology with fewer parts, higher efficiency and simpler control scheme. Without switch restrictions, the size and weight of the power conversion unit can be greatly reduced, thus making room for more charging stations, providing more space to carry paying passengers and goods, or extending the endurance and running time of heavy vehicles, electric buses and other battery driven commercial vehicles, all of which can reduce the overall system cost.

     Leon Gross, Vice President of Microchip's Discrete Products Business Unit, said: "System developers in the field of transportation are constantly required to accommodate more people and goods in vehicles that cannot grow larger. One of the best ways to help achieve this goal is to significantly reduce the size and weight of power conversion equipment by using high-voltage silicon carbide power devices. Applications in the transportation industry can also bring similar benefits to applications in many other industries."

     The characteristics of the new product include the stability of the gate oxide. Microchip observed in the repeated non clamping inductive switch (R-UIS) test that the threshold voltage did not drift even after it was extended to 100000 pulses. The R-UIS test also showed excellent avalanche resistance and parameter stability, as well as the stability of the grid oxide, achieving reliable operation within the service life of the system. The use of silicon carbide MOSFET can eliminate the need for external diodes. Short circuit withstand capacity equivalent to IGBT can withstand harmful electrical transients. In the junction temperature range of 0 to 175 ℃, the flat RDS (on) curve enables the power system to operate more stably than the silicon carbide MOSFET, which is more sensitive to temperature.

     Microchip simplifies the adoption of technology in a standard and customizable form through the AgileSwitch digital programmable gate driver family and various discrete and power modules. These gate drivers help speed up the development of silicon carbide from experiment to production.

     Microchip's other silicon carbide products include 700V and 1200V MOSFETs and Schottky barrier diode series, which provide bare chips and various discrete and power module packages. Microchip combines internal silicon carbide wafer production with low inductance power package and digital programmable gate driver, enabling designers to produce the most efficient, compact and reliable final product. Microchip's overall system solution also includes MCU, analog and MCU peripherals, and communication, wireless and security technology products.