Microchip continues to expand its portfolio of gallium nitride (GaN) RF power devices

     Microchip Technology Inc announced a significant expansion of its portfolio of gallium nitride (GaN) radio frequency (RF) power devices, introducing new monolithic microwave integrated circuits (Mmics) and discrete transistors at frequencies up to 20 gigahertz (GHz). These devices combine high power added efficiency (PAE) with high linearity, providing new levels of performance for applications such as 5G, electronic warfare, satellite communications, commercial and defense radar systems and test equipment.

     Like all of Microchip's GaN RF power products, the new device is manufactured using silicon carbi-based gallium nitride technology, providing the optimal combination of high power density and yield, can operate at high pressures, and has a lifetime of more than 1 million hours at a junction temperature of 255 ° C.

     These products include 12 to 20 GHz gallium nitride Mmics covering 2 to 18 GHz, 12 to 20 GHz, 3dB compression point (P3dB) RF output power up to 20W, efficiency up to 25%; Bare sheet and packaged Gallium nitride MMIC amplifiers for S and X bands with PAE up to 60%, and discrete high electron mobility transistor (HEMT) devices with DC to 14 GHz coverage and P3dB RF output power up to 100W with a maximum efficiency of 70%.

     "Microchip continues to invest in building a family of GaN RF products to support applications at all frequencies, from microwaves to millimeter wavelengths," said Leon Gross, vice president of Microchip's Discrete Products business. Our product portfolio includes more than 50 devices ranging from low power levels to 2.2 kW. "The products announced today span 2 to 20 GHz and are designed to address the linearity and efficiency challenges posed by high-order modulation technologies adopted in 5G and other wireless networks, as well as the unique needs of satellite communications and defense applications."

     In addition to GaN devices, Microchip's RF semiconductor portfolio includes Gallium arsenide (GaAs) RF amplifiers and modules, low noise amplifiers, front-end modules (RFFE), varicosity diodes, Schottky and PIN diodes, RF switches, and voltage variable attenuators. In addition, the company offers high-performance surface acoustic wave (SAW) sensors and micro-electro-mechanical system (MEMS) oscillators as well as highly integrated modules. These modules combine a single chip microcomputer (MCU) with a radio frequency transceiver (Wi-Fi MCU) to support major short-range wireless communication protocols from Bluetooth and Wi-Fi to LoRa.