Microchip expands Serial Quad I/O SuperFlash family of memory devices with the introduction of 4 Mb and 8 Mb 1.8V low-power memory

     Microchip Technology announced the SST26WF080B and SST26WF040B devices, extending its 1.8V Serial Quad I/O(SQI)SuperFlash memory family. Available in both 4 Mb and 8 Mb storage capacities, the new devices are manufactured using Microchip's high-performance SuperFlash technology to deliver the industry's fastest erase times and superior reliability.

     Thanks to the use of SuperFlash technology, the new SST26WF080B/040B device erasing speed is faster than other similar devices. Sector and block erase commands can be completed in as little as 18 milliseconds, and the entire chip erase operation takes only 35 milliseconds. Similar devices generally take 5-15 seconds to complete the entire chip erase operation. Apparently, the SST26WF080B/040B is about 300 times faster to erase. By minimizing the time required for testing and firmware updates, the extremely fast erase performance of the new devices provides customers with significant cost savings and increased productivity.

     The SQI interface of the new device is a 104 MHz high-speed quad I/O serial interface that enables high data throughput even in low pin count packages. The interface supports low-latency execution-in-place (XIP) functionality, allowing programs to be stored and executed directly in flash memory without code mapping on RAM devices. Compared with x16 parallel flash memory devices, SST26WF080B/040B has faster data throughput without the high cost and high pin count associated with parallel flash memory. In addition, the SQI interface provides a complete command set that is backward compatible with the traditional Serial Peripheral Interface (SPI) protocol.

     The SST26WF080B/040B is designed for low power consumption to help maximize battery life in portable power supply applications. The typical current consumption of the new device in standby mode is only 10 µA, while the typical current consumption in deep power down mode is further reduced to 1.8 µA. The typical active read current is 15 mA at 104 MHz. The combination of 1.8V low-power operation and small package size makes the SST26WF080B/040B the perfect choice for a variety of applications such as mobile phones, Bluetooth ® headsets, GPS, camera modules, hearing AIDS and other battery-powered devices.

     SST26WF080B/040B has excellent quality and reliability, data storage time of up to 100 years, and can erase/write more than 100,000 times, extremely durable. Further security enhancements include software write protection for individual blocks for flexible data/code security and a one-time programmable (OTP) 2 KB security ID area. These features help prevent unauthorized access and other malicious read, programming, and erase attempts. The device also features a JEDEC-compliant Serial Flash Discoverable Parameter (SFDP) table that contains identifying information about the functionality and performance of the SST26WF080B/040B, simplifying software design.

     Randy Drwinga, Microchip's vice president of storage Products, said: "The addition of the SST26WF080B/040B SuperFlash to our 1.8V low-power Serial Quad I/O product line brings customers the industry's fastest erase high-speed flash memory solution. With its small size and low power consumption, the new device is ideal for a new generation of portable, battery-powered embedded designs, including iot applications."