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Microchip helps build reliable high-voltage electronics to launch SiC products

Nov 12 2019 2019-11 Power Microchip Technology
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Microchip, through its subsidiary Microsemi, announced the launch of a series of SiC power devices. This series of devices has good durability and advantages of wide-band gap technology. They will complement Microchip's wide range of microcontroller and analog solutions and join Microchip's growing SiC portfolio to meet the rapidly evolving market needs of electric vehicles and other high-power applications.

     Microchip, through its subsidiary Microsemi, announced the launch of a series of SiC power devices. This series of devices has good durability and advantages of wide-band gap technology. They will complement Microchip's wide range of microcontroller and analog solutions and join Microchip's growing SiC portfolio to meet the rapidly evolving market needs of electric vehicles and other high-power applications.

 

     Microchip's 700V SiC MOSFETs and 700V and 1200V SiC Schottky Barrier Diodes (SBD) will join the company's existing SiC power module portfolio. With more than 35 discrete device products added to the portfolio already in production and through rigorous durability testing, Microchip offers comprehensive development services, tools, and reference design support. Microchip currently offers SiC bare chips, discrete devices, and power modules in rated voltage, rated current, and various packages.

 

     Rich Simoncic, senior vice president of Microchip's Discrete Devices and Power Product Management Group, said: "The evolution and application of SiC technology has begun to accelerate, and Microchip has been deeply involved in this market for many years, and has been committed to meeting the growing global demand for SiC products to maintain a global leadership position. We leverage reliable products to build our portfolio and provide robust infrastructure and supply chain support to meet our customers' needs to execute and adapt their product development plans."

 

     Microchip's SiC MOSFETs and SBDS enable more efficient switching operations at higher frequencies and pass durability testing at all levels, which is critical to ensuring long-term reliability. Induction switch (UIS) durability tests, designed to measure the degradation and premature failure of the device under avalanche conditions, where the peak voltage exceeds the breakdown voltage of the device, show that Microchip SiC SBD outperforms other SiC diodes by about 20%. In addition, Microchip's SiC MOSFETs are also superior to their peers in terms of performance, with good gate oxide protection and channel integrity, even after 100,000 repeated UIS (RUIS) tests, their parameters can be maintained at normal levels.

 

     Microchip is one of the only suppliers in the world that offers both silicon and SiC discrete device/module solutions. The company's products, which include external charging stations, in-car chargers, DC-DC converters and powertrain/traction control solutions, are well positioned to meet the growing demand for electric vehicle systems. The new SiC devices will use Microchip's customer-driven phase-out mechanism, and Microchip will decide whether to continue manufacturing such products based on customer demand.

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