Microchip introduces a broad portfolio of IGBT 7 power devices designed for sustainability, e-mobility and data center applications

     To meet the growing demand for higher efficiency, smaller size and higher performance in power electronic systems, power components are constantly evolving. To provide system designers with a broad range of power solutions, Microchip Technology announced the IGBT 7 device portfolio in different packages, supporting multiple topologies, and current and voltage ranges.

     With higher power capacity, lower power losses and compact device sizes, this new portfolio is designed to meet the needs of high-growth market segments such as sustainability, electric vehicles and data centers. High-performance IGBT 7 devices are key components for power applications in solar inverters, hydrogen energy ecosystems, commercial and agricultural vehicles, and more electric aircraft (MEA).

     Designers can choose the right power device solution according to their requirements. The IGBT 7 devices are available in standard D3 and D4 62mm packages, as well as SP6C, SP1F and SP6LI packages. The portfolio is available in multiple configurations in the following topologies: three-level neutral clamp (NPC), three-phase bridge, boost Chopper, buck chopper, dual common source, full bridge, phase leg, single switch, and T-type. The voltage range is 1200V to 1700V and the current range is 50A to 900A.

     Leon Gross, Microchip's vice president of Discrete Products, said: "The versatile IGBT 7 family is the perfect combination of ease of use and cost effectiveness with higher power density and reliability, providing our customers with maximum flexibility. These products are designed for general industrial applications as well as specialized aerospace and defense applications. In addition, our power solutions integrate with Microchip's broad array of FPgas, MCU, microprocessors (MPUs), dsPIC® digital Signal controllers (DSC), and simulators, enabling a complete system solution from one vendor."

     Lower on-IGBT voltage (Vce), improved anti-parallel diodes (lower Vf), and higher current capability enable lower power losses, higher power density, and higher system efficiency. The low inductance package combined with the higher overload capability at Tvj-175 °C makes these devices an excellent choice for creating rugged, highly reliable aerospace and defense applications such as propulsion, drive, and power distribution at a lower system cost.

     For motor control applications where enhanced dv/dt controllability is required, the IGBT 7 device has been designed for efficient, smooth, and optimized switching drives that enable smooth motor rotation. These high-performance devices are also designed to improve system reliability, reduce EMI and reduce voltage spikes.