
The industry expects silicon carbon-based (SiC) systems to maximize efficiency and reduce size and weight to help engineers create innovative power solutions. This demand is growing continuously and rapidly. Application scenarios for SiC technology include electric vehicles, charging stations, smart grids, industrial power systems, and aircraft power systems.
Microchip's SiC family includes 700V, 1200V, and 1700V commercial-grade power modules based on Schottky Barrier Diodes (SBD). In addition to providing different current and packaging solutions, The new series of Psus also feature a variety of topologies including Dual diodes, Full Bridge, Phase Leg, Dual Common Cathode and 3-Phase bridge. The SiC SBD module combines multiple SiC diode chips with options to integrate substrate and backboard materials into a single module, thereby simplifying the design, maximizing switching efficiency, reducing temperature rise and reducing system size.
Leon Gross, vice president of Microchip's discrete Devices business group, said: "The adoption and expansion of SiC technology is the driving force behind current system innovation. As an industry leader, Microchip is working with customers in all market segments and around the world. Our business focus is always on providing new and reliable solutions. "From product definition to launch, our SiC technology provides superior reliability and robustness to help power system designers ensure the long-term operation of the power system without compromising system performance."
The extensive 700V, 1200V, and 1700V SiC SBD module product line uses Microchip's latest generation SiC chips to maximize system reliability and robustness, ensuring power system life and stability. The high avalanche performance of these devices allows system designers to reduce the need for buffer circuits. Due to the stability of the body diodes of these devices, the power system can adopt the body diodes internally to avoid performance degradation after long-term operation. Microchip's internal and third-party tests have shown that these devices perform better on key reliability metrics than other devices manufactured using SiC.
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