Microchip introduces the latest generation of 700 and 1200V silicon carbide Schottky barrier diodes for automotive

     The wave of automotive electrification is sweeping the world, and high-voltage automotive systems such as electric vehicles, on-board chargers, and DC/DC converters all require innovative power technologies such as silicon carbide (SiC). Microchip Technology announced the availability of newly certified 700 and 1200V silicon Carbide (SiC) Schottky Barrier Diode (SBD) power devices, providing electric vehicle (EV) system designers with a solution that meets demanding automotive quality standards while supporting a wide range of voltage, current and packaging options.

     Microchip's new devices are AEC-Q101 certified to maximize system reliability and durability for electric vehicle power supply designers who need to maintain high quality while improving system efficiency, achieving a stable and long-lasting application life. The superior avalanche rectification performance of the new device allows designers to reduce the need for external protection circuits and reduce system cost and complexity.

     Leon Gross, vice president of Microchip's Discrete Products business group, said: "As a longtime supplier to the automotive industry, Microchip continues to expand its automotive power solutions and lead the transformation of power systems in the field of automotive electrification. We have been focused on providing automotive solutions that help customers ease the transition to silicon carbide (SiC) while minimizing the risk of quality, supply and support challenges."

     Microchip has been a supplier to the automotive industry for more than 25 years. With silicon carbide (SiC) technology and multiple IATF 16949:2016 certified manufacturing facilities, the company provides high-quality devices through flexible manufacturing solutions that help minimize supply chain risk.

     Through internal and third-party testing, Microchip's devices have demonstrated superior performance over SiC devices made by other vendors based on key reliability metrics. Unlike other silicon carbide (SiC) devices that experience performance degradation under extreme conditions, Microchip devices maintain stable performance, helping to extend application life. Microchip's silicon carbide (SiC) solutions provide industry-leading reliability and durability. Durability tests have shown that Microchip's silicon Carbide Schottky diodes (SiC SBD) can withstand up to 20 percent more energy in unclamped inductive switches (UIS) with the lowest level of current leakage at high temperatures, resulting in longer system life and more reliable operation.

     Microchip's SiC automotive power devices further expand its extensive portfolio of controller, analog and connectivity solutions to provide designers with total system solutions for electric vehicles and charging stations. Microchip also offers a broad portfolio of 700, 1200 and 1700V silicon carbide Schottky diodes (SiC SBD) and metal-oxide semiconductor field-effect transistor (MOSFET) power modules utilizing the latest generation of silicon carbide (SiC) bare metal chips. In addition, Microchip's dsPIC digital signal controllers offer high performance, low power consumption and flexible peripherals. Microchip's AgileSwitch family of digital programmable gate drives further speeds up the process from the design stage to production. These solutions can also be used in renewable energy, power grids, industry, transportation, healthcare, data centers, aerospace and defense systems.