The satellite communication system uses complex modulation solutions to achieve extremely fast data rates for transmitting video and broadband data. Therefore, they must have the power of high RF output, while ensuring the signal to maintain its ideal characteristics. Microchip Technology Inc announced the launch of the new type of GMICP2731-10 GAN MMIC power amplifier to meet the above requirements.
This new device is Microchip's first GAN MMIC (nitrogen -nitride microwave integrated circuit), which is designed for commercial and national defense satellite communications, 5G networks, and other aerospace and national defense systems.
GMICP2731-10 is made of silicon carbide basal nitride technology. It can provide a saturated radio frequency output power up to 10W on the 3.5 GHz bandwidth between 27.5 and 31 GHz. The power of GMICP2731-10 can be increased by 20%on the basis of this; small signal gain is 22 dB; the ripple loss is 15 dB. In addition, the new device has a balanced structure, which can well match 50 ohm resistors, and integrated DC blocking capacitors at the output end to simplify design integration.
Leon Gross, vice president of Microchip's vice president of product business, said: "As the communication system uses complex modulation solutions such as 128-QAM, and the power of the solid power amplifier (SSPA) continues to rise, the designer designers of RF power amplifiers are facing difficult challenges. That is, when looking for higher power solutions, weighing weight and power consumption. Compared with GAAS similar products, the GAN MMIC used in high -power SSPA can reduce power consumption and weight by more than 30%. This is for satellite OEMs. A huge advantage. The new product reflects the advantages of nitride technology and meets the requirements of the original equipment manufacturers on size, weight, power consumption and cost. "
GMICP2731-10 further expands the existing product lineup of Microchip, including gallium arsenide 镓 MMIC radio frequency power amplifier, switch, low noise amplifier and Wi-Fi® front-end module, and silicon nitrogen mobility for radar systems for radar systems The transistor (HEMT) driver and the final amplifier transistor.
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