Microchip's TN2130 is a 300 V 25 Ω N channel enhanced mode MOSFET

     The TN2130 low-threshold, enhanced mode (normally off) transistor uses a vertical DMOS structure and a mature silicon gate manufacturing process. This combination results in a device with the power processing capabilities of a bipolar transistor and the high input impedance and positive temperature coefficient inherent in MOS devices.

     The device has all the characteristics of the MOS structure without thermal runaway and heat-induced secondary breakdown. Microchip's vertical DMOS FETs are ideal for a wide range of switching and amplification applications that require very low threshold voltages, high breakdown voltages, high input impedance, low input capacitance, and fast switching speeds.