
Microsemi Corporation has announced a unique new line of patented ultra-low capacitance power transient Voltage suppression (TVS) diodes. The new device leverages the company's 50-year legacy in high-reliability TVS technology and unique radio frequency (RF) PIN diode expertise to protect high-speed data lines and other applications with demanding capacity requirements. Significantly more than other typical low-capacitance TVS devices used to protect Ethernet and data interfaces with rates up to 500Mbit/s.
The new 1N8149 to 1N8182 and 1N8149US to 1N8182US surface-mounted low-capacitance TVS diode products feature 150W pulse peak power at 10/1,000 microseconds, with extremely low capacitance at a maximum of only 4pF. The performance of 150W TVS diodes is equivalent to delivering pulse peak power of more than 1,000W in 8/20 microseconds, and a voltage range of 6.8 V to 170V. The new devices also meet requirements for high-end industrial and avionics electrostatic discharge (ESD), electrical fast transients (EFT) and low lightning threat levels in accordance with IEC61000-4-2, IEC61000-4-5 and RTCA-DO160 standards. Microsemi is developing low-capacitance TVS products with higher 500W power ratings at 10/1,000 microseconds to overcome the threat of higher voltage transients.
Leon Gross, Senior Director and business unit Manager of Microsemi's Power Discrete and Modules business unit, said: "The growing trend towards aircraft electrification, greater reliability and greater fuel efficiency is driving the demand for increasingly powerful TVS solutions that are lighter and smaller and offer superior transient overvoltage protection. From a global demand perspective, the overall protection device market is likely to reach $1 billion by 2018. As a leader in high-reliability solutions, Microsemi will continue to develop a full range of innovative products to support the evolving and demanding needs of the industry."
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