NXP and TSMC launch FinFET Embedded MRAM, the first 16 nm chip for vehicles

     NXP Semiconductors announced a partnership with Taiwan Semiconductor Manufacturing Corporation (TSMC) to introduce the industry's first automotive embedded Magnetic Random Access Memory using 16-nanometer (nm) fin-field-effect transistor (FinFET) technology. MRAM). As automakers move toward software-defined vehicles; SDV) transformation, automakers need to support multiple generations of software updates on a single hardware platform. Combining NXP's high-performance S32 automotive processors with fast and highly reliable next-generation non-volatile memory using 16-nanometer FinFET technology provides the ideal hardware platform to support this transformation.

     NXP and TSMC jointly develop embedded magneto-resistive random access memory (MRAM) silicon Smart (IP) using 16-nanometer fin-fin field-effect transistor (FinFET) technology, which enables automotive manufacturers to more efficiently roll out new features and accelerate over the air (in-flight download; Download over the air) updates, as well as eliminate production bottlenecks. NXP's next-generation S32 zonal processor and general purpose automotive MCU are expected to be the first products to be available for sample in early 2025.

     MRAM updates 20MB of code in about 3 seconds, compared to about 1 minute for flash memory, minimizing downtime caused by software updates and allowing automakers to eliminate bottlenecks caused by long module programming hours. In addition, MRAM offers up to a million update cycles, 10 times faster flash memory and other new memory technologies, providing highly reliable technology for the vehicle's mission profile.

     Software-defined cars allow automakers to download over the air (over-the-air; The update introduces new comfort, safety, and convenience features that extend vehicle life and enhance functionality, attractiveness, and profitability. As software-based features become more prevalent in vehicles, the frequency of updates will continue to increase, and the speed and robustness of MRAM will become extremely important. TSMC's 16 FinFET embedded MRAM technology exceeds the rigors of in-vehicle applications with its million-cycle durability, solder reflow support, and data retention for up to 20 years at 150 degrees Celsius.

     "Innovators within NXP have always been quick to recognize the potential of TSMC's new process technologies, especially in demanding in-vehicle applications," said Dr. Zhang Xiaoqiang, senior vice president of Business Development at TSMC. "We are excited to see TSMC's leading MRAM technology being applied to the NXP S32 platform to help enable the next generation of software-defined vehicles."

     "NXP and TSMC have successfully worked together for decades to deliver high-quality embedded memory technology to the automotive market," said Henri Ardevol, Executive vice president and general manager, Automotive Processing, NXP Semiconductors. "MRAM is a breakthrough addition to NXP's S32 automotive solutions family, supporting the next generation of vehicle architectures."