NXP and ZF collaborate to develop SIC-based traction inverters to help enhance electric vehicle powertrains

     NXP Semiconductors has announced a partnership with ZF Friedrichshafen AG, a leader in electric vehicles, for the next generation of SiC based traction inverter solutions for electric vehicles (EV). The solution uses NXP's advanced GD316x High voltage (HV) isolated gate drivers designed to accelerate the adoption of 800V and SiC power devices. The GD316x product family enables safe, efficient and higher performance traction inverters that extend the range of electric vehicles, reduce charging times, and reduce system-level costs for Oems.the collaboration between NXP and ZF is an important step in the electrification of the automotive industry, helping to create safer, sustainable and energy-efficient electric vehicles for the future.

     Dr. Carsten Gotte, Senior Vice President of Electric Powertrain Technology at ZF, said: "We look forward to working with NXP to improve the functionality and performance of our 800V traction inverter solution, which will help us meet our emission reduction and sustainability goals. "With ZF's expertise in motor control and power electronics combined with NXP's GD316x family of gate drivers, our latest SiC based traction inverters offer increased power and bulk density, efficiency and differentiation, resulting in significant safety, efficiency, range and performance improvements for our customers."

     The traction inverter is a key component of the electric powertrain of an electric vehicle, which converts the DC voltage of the battery to the AC voltage that changes over time to drive the motor of the car. Traction inverters are gradually moving to SiC designs, and SiC power devices need to be used in conjunction with advanced high voltage isolated gate drivers. Compared with the previous generation of silicon-based IGBT and MOSFET power switches, SiC has the advantages of higher switching frequency, lower conduction loss, better thermal characteristics and stronger high voltage stability.

     The GD316x series of advanced, functionally safe isolated high voltage gate drivers integrates a variety of programmable control, diagnostic, monitoring and protection functions to better drive the latest SiC power modules for automotive traction inverter applications. The GD3162 is highly integrated and therefore very small in size and simplifies the system design process. Its excellent features reduce electromagnetic compatibility (EMC) noise while also reducing switching energy losses to improve efficiency. Combined with a fast short circuit protection time (

     Li Xiaohe, global Senior Vice president, New Energy and Drive Systems product line general manager, NXP Semiconductors, said: "We are working with ZF to develop the next generation of power electronics for future electric vehicles. Our family of gate drivers offers several outstanding features to both protect and leverage high voltage SiC power switches, making them ideal for ZF's new SiC based traction inverter solutions. This collaboration is a testament to our commitment to providing advanced solutions that help Oems achieve their EV performance and sustainability goals."