
NXP Semiconductors announced the launch of the first RF power transistor designed for RF energy using silicon carbon-based gallium nitride (GaN-on-SiC). The MRF24G300HS takes advantage of GaN's high efficiency to surpass the efficiency of most magnetrons at 2.45 GHz, while SiC's high thermal conductivity helps ensure continuous wave (CW) operation.
For more than 50 years, 2.45 GHz magnetrons have been used in consumer and industrial applications ranging from microwave ovens to high-power welding machines. A few years ago, solid-state solutions appeared on the market, bringing advanced control, reliability, and ease of use. The ability to dynamically adjust power, frequency, and phase helps optimize the energy transferred to the material or food being heated. At full rated performance, the long service life of the transistor reduces the need for replacement. However, before the advent of GaN-on-SiC for RF energy, solid-state devices were not efficient enough to meet the performance standards of existing magnetrons.
The MRF24G300HS is a 330 W CW, 50 V GaN-on-SiC transistor with an energy conversion efficiency of 73% at 2.45 GHz, five points higher than the latest LDMOS technology. The high power density of GaN enables devices to achieve high output power in small sizes. Compared to LDMOS, GaN technology itself has a high output impedance, allowing broadband matching. This reduces design time and ensures consistency on the production line without the need for more manual adjustments. The simplified gate bias of the MRF24G300HS RF transistor eliminates the complex power-on sequence steps common on GaN devices.
Paul Hart, senior vice president and general manager of NXP Radio Power Solutions, said: "The intelligent control, low maintenance and ease of use of solid state opens up many new application opportunities, such as smart cooking and Industry 4.0 heating devices. By breaking down the efficiency barriers of vacuum tubes, we help our customers unleash innovation without compromising performance."
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